少妇SPA按摩按出水了_青青草国产成人99久久_亚洲精品美女久久7777777_中国老妇女BBBBⅩXXX小说

QQ在線客服
首頁 >技術支持 > 芯片電容
技術支持
單層芯片電容SLC的發展歷史
發(fa)布者(zhe) : admin 發布時(shi)間 : 2018/05/23 03:05:27
最原始的電容器(qi)(qi)(qi)(qi)是1745年(nian)荷蘭萊(lai)頓(dun)大學P.穆森布羅克發(fa)(fa)明(ming)(ming)(ming)的萊(lai)頓(dun)瓶(ping),它是玻璃電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)的雛形。1874年(nian)德國M.鮑爾發(fa)(fa)明(ming)(ming)(ming)云母電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)。1876年(nian)英國D.斐茨(ci)杰拉(la)德發(fa)(fa)明(ming)(ming)(ming)紙(zhi)(zhi)介電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)。1900年(nian)意大利L.隆(long)巴迪發(fa)(fa)明(ming)(ming)(ming)瓷介電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi),30年(nian)代(dai)人們(men)發(fa)(fa)現在陶瓷中添加鈦酸(suan)鹽可使介電(dian)(dian)(dian)常數(shu)成(cheng)倍增長,因而制(zhi)造出(chu)較便宜的瓷介電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)。1921年(nian)出(chu)現液體鋁(lv)電(dian)(dian)(dian)解電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi),1938年(nian)前后(hou)改進(jin)為(wei)由多孔紙(zhi)(zhi)浸漬電(dian)(dian)(dian)糊(hu)的干式鋁(lv)電(dian)(dian)(dian)解電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)。1949年(nian)出(chu)現液體燒結(jie)鉭電(dian)(dian)(dian)解電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi),1956年(nian)制(zhi)成(cheng)固體燒結(jie)鉭電(dian)(dian)(dian)解電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)。50年(nian)代(dai)初,晶體管發(fa)(fa)明(ming)(ming)(ming)后(hou),元件向小(xiao)型化方向發(fa)(fa)展。隨著混合(he)集成(cheng)電(dian)(dian)(dian)路的發(fa)(fa)展,又(you)出(chu)現了無引線的超(chao)小(xiao)型片狀電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)和(he)其他外貼電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)。20世紀70年(nian)代(dai),隨著激光的發(fa)(fa)明(ming)(ming)(ming),用電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)器(qi)(qi)(qi)(qi)為(wei)激光武器(qi)(qi)(qi)(qi)供電(dian)(dian)(dian)成(cheng)為(wei)人們(men)的設想,超(chao)級(ji)電(dian)(dian)(dian)容(rong)(rong)(rong)(rong)(rong)應運而生。


在(zai)電子線(xian)路中(zhong),電容(rong)(rong)用(yong)來通過(guo)交(jiao)流而阻(zu)隔直流,也用(yong)來存(cun)儲和(he)釋放(fang)電荷以(yi)(yi)充當(dang)濾(lv)波器,平滑輸出脈動信號。一般1μF以(yi)(yi)上(shang)的(de)電容(rong)(rong)均為電解電容(rong)(rong),而1μF以(yi)(yi)下的(de)電容(rong)(rong)多為瓷片電容(rong)(rong)。大容(rong)(rong)量的(de)電容(rong)(rong)往往是(shi)作濾(lv)波和(he)存(cun)儲電荷用(yong)。小容(rong)(rong)量的(de)電容(rong)(rong),通常(chang)在(zai)高頻電路中(zhong)使用(yong),如收音機、發射機和(he)振(zhen)蕩器中(zhong)。


隨著(zhu)移動互聯網和(he)物聯網的(de)(de)發(fa)展,無線(xian)(xian)數據流量呈爆炸式增(zeng)長,這(zhe)(zhe)種海量的(de)(de)數據業務需求(qiu),不僅依(yi)賴于更(geng)先進(jin)的(de)(de)無線(xian)(xian)傳輸(shu)技術的(de)(de)演進(jin),也需要(yao)更(geng)多(duo)的(de)(de)頻譜資(zi)源(yuan)的(de)(de)支持。目前,主流移動通信系統使用(yong)的(de)(de)頻段主要(yao)是6G以下的(de)(de)VHF/UHF頻段,然而,這(zhe)(zhe)些低頻段現在已經很(hen)難(nan)找到(dao)連續可用(yong)的(de)(de)寬帶(dai)頻譜資(zi)源(yuan)。因此,頻譜向高頻段拓展,發(fa)展高頻段無線(xian)(xian)通信已成為業界趨勢。


電(dian)(dian)(dian)容器在(zai)高(gao)頻(pin)應用時,自(zi)諧振頻(pin)率(lv)(lv)不(bu)僅與(yu)(yu)(yu)其自(zi)身的(de)(de)寄生(sheng)電(dian)(dian)(dian)感(gan)有(you)(you)關(guan),而且還與(yu)(yu)(yu)PCB上過(guo)孔的(de)(de)寄生(sheng)電(dian)(dian)(dian)感(gan)、電(dian)(dian)(dian)容器與(yu)(yu)(yu)其它元件(如芯片)的(de)(de)連接導(dao)(dao)線(包括印制導(dao)(dao)線)的(de)(de)寄生(sheng)電(dian)(dian)(dian)感(gan)等都(dou)有(you)(you)關(guan)系(xi)。低頻(pin)情況下(xia),這些寄生(sheng)參數(shu)很小,可以忽(hu)略不(bu)計。當工(gong)作(zuo)頻(pin)率(lv)(lv)進入射頻(pin)/微(wei)波(bo)范圍內時,情況就大(da)不(bu)相同。金(jin)屬導(dao)(dao)線不(bu)僅具有(you)(you)自(zi)身的(de)(de)電(dian)(dian)(dian)阻和(he)電(dian)(dian)(dian)感(gan)或電(dian)(dian)(dian)容,而且還是頻(pin)率(lv)(lv)的(de)(de)函數(shu)。在(zai)高(gao)頻(pin)電(dian)(dian)(dian)路工(gong)作(zuo)時,金(jin)屬損(sun)耗占的(de)(de)損(sun)耗比例(li)會很高(gao),而在(zai)所有(you)(you)射頻(pin)/微(wei)波(bo)電(dian)(dian)(dian)路設計中,選(xuan)用低損(sun)耗(超低ESR)電(dian)(dian)(dian)容都(dou)是一(yi)項重要考慮。


由于目(mu)前的(de)(de)集成元(yuan)件(jian)技(ji)術(shu)無(wu)法(fa)做出(chu)容量較大的(de)(de)電容器,用(yong)現(xian)有的(de)(de)技(ji)術(shu)通(tong)過集成電路(lu)(lu)獲得較大的(de)(de)電容非(fei)常困難。用(yong)于微(wei)波電路(lu)(lu)的(de)(de)芯片電容采用溫度系數接近于零(ling)而(er)微波損耗極小(xiao)(xiao)(xiao)的(de)微波介質陶瓷作為介質層,該類電(dian)容器(qi)剩余電(dian)感小(xiao)(xiao)(xiao)、 Q 值大(da)、自(zi)諧振頻率高。將該電(dian)容與(yu)其(qi)它元件組合在一(yi)個封裝(zhuang)內,不僅實現(xian)多(duo)功能,而(er)且節省PCB 面積、使用方(fang)便,更重要的(de)是最(zui)大(da)限(xian)度地(di)縮短電(dian)容器(qi)與(yu)芯片之間的(de)距(ju)離(li),從而(er)布線的(de)寄生電(dian)感減小(xiao)(xiao)(xiao)了。微型化的片式微波單層瓷介電容器(SLC) 展(zhan)(zhan)示了良好的發(fa)展(zhan)(zhan)前景(jing)。

上一篇 : 沒有了(le)

下一篇 : 單層芯片電容參數簡介